South Korean semiconductor giant SK Hynix has recently demonstrated its cutting-edge Universal Flash Storage (UFS) 4.1 technology at the FMS 2024 Summit. The company revealed new storage solutions designed to push the boundaries of data transfer and efficiency, showcasing both advancements in flash memory and new specifications set to elevate device performance.

At the NAND Tech, Mobile, and Automotive section, attendees can see products such as the company’s 321-layer NAND and ZUFS 4.0

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Key Points

UFS 4.1 Introduction: SK Hynix introduced two new UFS 4.1 storage products with capacities of 512GB and 1TB.

Flash Memory Technology: The storage chips are built on 321-layer stacked V9 TLC NAND flash memory.

Enhanced Data Transfer Rates: UFS 4.1 is expected to significantly outperform the previous generation, UFS 4.0.

At the NAND Tech, Mobile, and Automotive section, attendees can see products such as the company’s 321-layer NAND and ZUFS 4.0

Features

The newly showcased UFS 4.1 storage units come with impressive specifications:

High-Speed Data Transfer: The UFS 4.1 technology supports data transfer rates up to 8 gigabits per second (GB/s), a notable enhancement over UFS 4.0’s 4 GB/s rate.

Advanced Flash Memory: SK Hynix demonstrated several advanced flash memory variants, including the 3.2Gbps V9 2Tb QLC and 3.6Gbps high-speed V9H 1Tb TLC particles.

Capacity and Performance: The 512GB and 1TB variants are expected to offer substantial storage capacity while ensuring high-speed data processing and retrieval.

At the NAND Tech, Mobile, and Automotive section, attendees can see products such as the company’s 321-layer NAND and ZUFS 4.0

Specifications

While detailed specifications for UFS 4.1 have not been fully disclosed, here are the known details:

Data Transfer Rate: Theoretical speeds could reach up to 8 GB/s.

NAND Flash Technology: Built on 321-layer stacked V9 1Tb TLC NAND flash memory.

Previous Benchmark: UFS 4.0 supports speeds up to 46.4Gbps, setting a high bar for UFS 4.1 to surpass.

The AI Memory and Storage section includes industry-leading solutions such as SK hynix’s HBM3E and eSSD portfolio

More Details

Performance Expectations: UFS 4.1 is anticipated to substantially improve data transfer and storage efficiency.

Device Compatibility: Early reports suggest that devices like the Galaxy S25 Ultra may be among the first to leverage UFS 4.1 technology, promising enhanced performance for future flagship smartphones.

Pricing and Availability

Current Status: As of now, pricing details for the UFS 4.1 storage solutions have not been officially announced. The availability of these chips will likely follow after their initial unveiling and further testing.

Conclusion

SK Hynix’s latest UFS 4.1 technology marks a significant leap forward in flash memory performance. With improved data transfer rates and advanced flash memory variants, UFS 4.1 is set to enhance the storage capabilities of future smartphones and other electronic devices. As the technology rolls out, it promises to bring faster, more efficient storage solutions, potentially debuting in high-end devices like the Galaxy S25 Ultra. The advancements demonstrated at FMS 2024 highlight SK Hynix’s commitment to pushing the envelope in semiconductor technology, setting new standards for storage performance.

Via @ news.skhynix.com