SK Hynix has officially introduced a revolutionary Universal Flash Storage (UFS) 4.1 solution featuring the world’s first 321-layer 1Tb TLC 4D NAND memory, pushing the boundaries of performance and efficiency for next-gen mobile devices. The new storage innovation aims to meet the increasing demands of artificial intelligence (AI) capabilities in flagship smartphones.

Key Highlights:

First-ever 321-layer 4D NAND integrated in a UFS 4.1 solution

Optimized for on-device AI and flagship mobile performance

Offers up to 4,300MB/s sequential read speeds

7% improvement in power efficiency over 238-layer predecessor

Available in 512GB and 1TB capacities

Designed for ultra-slim smartphone integration with 0.85mm thickness

Designed for the AI-Driven Mobile Era

With mobile AI becoming a core feature in modern smartphones—from real-time language translation to advanced image processing—SK Hynix’s new UFS 4.1 solution is tailored to support these demanding workloads. By combining high-speed data processing with efficient power usage, this next-gen storage is engineered to enhance user experiences across multitasking, app launching, and content rendering.

Performance Upgrades for AI Workloads

The standout specification of the UFS 4.1 solution is its 321-layer NAND architecture, a major leap from the previous 238-layer model. This change results in a 15% increase in random read speed and a 40% improvement in random write performance, two key metrics that directly impact responsiveness and real-time AI execution.

Moreover, sequential read speeds reach 4,300MB/s, the fastest ever for a fourth-generation UFS interface. This allows for quicker loading of large files and faster system-level responses, particularly valuable for AI applications like facial recognition, object detection, and voice interaction.

Energy Efficiency Meets Sleek Design

Beyond raw speed, power efficiency and device form factor are critical in today’s smartphones. The new UFS 4.1 module features a 7% power efficiency improvement compared to its 238-layer predecessor, which helps extend battery life during AI-intensive operations.

Additionally, the thickness of the module has been reduced to 0.85mm from 1mm, allowing smartphone manufacturers to design slimmer and more compact devices without compromising storage or performance.

Future Availability and Capacities

SK Hynix has confirmed that the new UFS 4.1 solution will be available in 512GB and 1TB storage options, catering to high-end flagship models that require large data capacities. The company aims to complete customer qualification by the end of 2025, with volume shipments expected in Q1 2026.

Conclusion:

The unveiling of the UFS 4.1 solution with 321-layer 4D NAND underscores SK Hynix’s commitment to advancing NAND flash innovation in the era of mobile AI. By combining ultra-fast performance, improved power efficiency, and slimmer design, the new storage platform positions the company as a formidable leader in the mobile memory market, especially as demand for AI-enabled devices accelerates.

As flagship smartphones continue to push the envelope with AI and real-time computing, SK Hynix’s latest solution is well poised to become a critical enabler for future mobile breakthroughs.